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| MS1227 RF & MICROWAVE TRANSISTORS HF SSB APPLICATIONS Features 30 MHz 12.5 VOLTS GOLD METALIZATION POUT = 20 W MINIMUM GP = 15 dB COMMON EMITTER CONFIGURATION DESCRIPTION: The MS1227 is a 12.5V epitaxial NPN planar transistor designed primarily for SSB communications. This device utilizes emitter ballasting for improved ruggedness and reliability. ABSOLUTE MAXIMUM RATINGS Symbol VCBO VCEO VEBO IC PDISS TJ TSTG Co llector-Base Voltage Co llector-Emitter Voltage Emit ter-Base Voltage Dev ice Current Po wer Dissipation Ju nction Temperature Storage Temperature Paramete r 36 18 4.0 4.5 80 +200 -65 to +150 Value U V V V A W C C nit Thermal Data RTH(J-C) Junction-case Thermal Resistance 2.2 C/W 053-7056 Rev - 10-2002 MS1227 25 ELECTRICAL SPECIFICATIONS (Tcase = 25C) Symbol BVcbo Bvces Bvceo Bvebo Ices HFE IC = 50mA IC = 50mA IC = 50mA IE = 5mA VCB = 15V VCE = 5V STATIC Test Conditions Min. IE = 0mA VBE = 0V IB = 0mA IC = 0mA IE = 0mA IC = 1A 36 36 18 4.0 --10 Value Typ. ------------- Max. --------5 200 Unit V V V V mA --- DYNAMIC Symbol POUT GP IMD Cob f = 30MHz f = 30MHz f = 30MHz f = 1 MHz Test Conditions Min. VCC = 12.5V VCC = 12.5V VCC = 12.5V VCB = 30V ICQ = 25mA ICQ = 25mA ICQ = 25mA 20 15 ----- Value Typ. --------- Max. -----30 135 Unit W dB dB pf 053-7056 Rev - 10-2002 MS1227 PACKAGE MECHANICAL DATA 053-7056 Rev - 10-2002 |
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